Attachment 80-T1262-1_RF exposu

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EMF Exposure Assessment of 9M MediaFLO Antenna August 7, 2006 80-T1262-1 Rev A Fang Han Restricted Distribution This document contains critical information about QUALCOMM products and may not be distributed to anyone that is not an employee of QUALCOMM without the approval of Configuration Management.


QUALCOMM Incorporated 5775 Morehouse Drive San Diego, CA 92121-1714 U.S.A. Copyright © 2006 QUALCOMM Incorporated. All rights reserved. Printed in the United States of America. All data and information contained in or disclosed by this document is confidential and proprietary information of QUALCOMM Incorporated and all rights therein are expressly reserved. By accepting this material, the recipient agrees that this material and the information contained therein is held in confidence and in trust and will not be used, copied, reproduced in whole or in part, nor its contents revealed in any manner to others without the express written permission of QUALCOMM Incorporated. OmniTRACS® , Wireless Business Solutions®, and QUALCOMM® are registered trademarks and registered service marks of QUALCOMM Incorporated. Other brand, product, or service names listed in this document are the trademarks/service marks or registered trademarks/service marks of their respective holders. Export of this technology may be controlled by the U.S. Government. Diversion contrary to U.S. law prohibited. The information in this document is subject to change with subsequent software releases without notice. EMF Exposure Assessment of 9M MediaFLO Antenna 80-T1262-1 Rev A Fang Han August 2006

Contents Contents ................................................................................................................................ iv 1. Introduction..........................................................................................................................1 2. Antenna and System Parameters .......................................................................................1 3. On-Axis and Off-Axis Power Density Calculation............................................................2 3.1 Far Field Calculations.......................................................................................................2 3.2 Near Field Calculationsnn ................................................................................................2 3.3 Transition Region Calculations ........................................................................................3 3.4 Region between Power Feed and Sub-Reflector ..............................................................3 3.5 Antenna Surface (Main Reflector)....................................................................................3 3.6 Antenna Area in Plane with Sub-Reflector.......................................................................4 4. Conclusions...........................................................................................................................4 5. Reference ..............................................................................................................................5 6. Engineering Declaration......................................................................................................5 80-T1262-1 Rev A QUALCOMM Proprietary Page iv

EMF Exposure Assessment of 9M MediaFLO Antenna Introduction 1. Introduction This report assesses non-ionizing electromagnetic field radiation from a VertexRSI 9.0 meter antenna for MediaFLO operation system in Qualcomm facility pursuant to FCC OET Bulletin, No. 65, Edition 97-01 [1]. Power flux densities generated from the antenna at far field, near field, transition region, sub-reflector, and main reflector surface are calculated based on the method recommended by the FCC Bulletin. Table 1 outlines the limits of exposure to EMF in the Ku-band in terms of power density specified by FCC and ICNIRP [2]. Table 1. Maximum permissible exposure (MPE) limits at Ku-band Power density Average time (min) Exposure environment 2 (W/m ) FCC ICNIRP General public/uncontrolled 10 30 4 (based on 68/f 1.05) Occupational/controlled 50 6 4 (based on 68/f 1.05) 2. Antenna and System Parameters The antenna and system specifications for power density assessment are listed in Table 2. Drawing of the antenna assembly and partition of power density are shown in Fig.1 and Fig.2 respectively. The worst case of simultaneous transmit of 13 carriers are considered in the analysis. Table 2. Antenna and system specs Main reflector diameter and area D = 9.0 m , Aa = πD 2 / 4 = 63.62 m 2 Sub-reflector diameter and area DS = 1.78 m , AS = πDS 2 / 4 = 2.49 m 2 Wavelength at mid-band 14.25 GHz λ = 0.021 m Maximum feed power at antenna flange 750 10 2 10 = 473.22 W Antenna gain G = 60.1 dBi = 1.02 × 10 6 EIRP EIRP = 86.85 dBW = 4.84 × 10 8 W Antenna aperture efficiency η = (Gλ2 / 4πAa ) = 0.57 -15dB antenna beam-width -15dB (0.032) at 0.34° 80-T1262-1 Rev A QUALCOMM Proprietary Page 1

On-Axis and Off-Axis Power Density Calculation EMF Exposure Assessment of 9M MediaFLO Antenna 4 1. far-field 2. near field 3. transition field 4. between feed and sub- reflector 5. antenna surface 5 6. surface in plane with sub-reflector 6 2 3 1 Figure 1. Radiation 4.8-meter ku-band antenna assembly – side view 3. On-Axis and Off-Axis Power Density Calculation 3.1 Far Field Calculations The distance to the beginning of the far field can be calculated as follows [1] 0.60 D 2 RFF = = 2308.5 m λ The maximum on-axis power density in the far field can be calculated as follows G × Pmax (or EIRP) S FF = = 7.23 W/m 2 4πRFF2 The maximum off-axis (0.34°) power density in the far field can be calculated as S FF_Off = 0.032 × S FF = 0.23 W/m 2 3.2 Near Field Calculations The distance to the extent of the near field can be calculated as follows D2 RNF = = 961.88 m 4λ Page 2 QUALCOMM Proprietary 80-T1262-1 Rev A

EMF Exposure Assessment of 9M MediaFLO Antenna On-Axis and Off-Axis Power Density Calculation The maximum on-axis power density in the near field can be determined by 16ηPmax S NF = = 16.88 W/m 2 πD 2 The maximum off-axis (>0.34°) power density in the near field can be calculated as S NF _ Off < 0.032 × S NF = 0.53 W/m 2 3.3 Transition Region Calculations The transition region will be the region extending from R NF to R FF . If the location falls within this transition region, the on-axis power density can be determined by the following equation: S NF R NF S TF = R The exposure level S TF at the transition region R ( R NF < R < RFF ) would be less than near-field exposure level and greater than far field exposure level, i.e., S FF < STF < S NF Therefore the average power density in transition region will not exceed 16.88 W/m 2 . 3.4 Region between Power Feed and Sub-Reflector The maximum on-axis power density between the RF power feed and sub- reflector can be determined by the following equation: Pmax S4 = = 190.17 W/m 2 AS 3.5 Antenna Surface (Main Reflector) Assuming uniform illumination and full reflection of the reflector surface, the power density at the antenna surface (main reflector) can be calculated as follows: 80-T1262-1 Rev A QUALCOMM Proprietary Page 3

Conclusions EMF Exposure Assessment of 9M MediaFLO Antenna 4 Pmax S5 = = 29.75 W/m 2 Aa The maximum off-axis (>0.34°) power density at the antenna surface (main reflector) can be calculated as S 5 _Off < 0.032 × S 5 = 0.94 W/m 2 3.6 Antenna Area in Plane with Sub-Reflector Assuming uniform illumination of the reflector surface, the power density near the antenna surface in plane with sub-reflector can be calculated as follows: 2.56 P S6 = = 19.40 W/m 2 Aa The maximum off-axis (>0.34°) power density near the antenna surface in plane with sub-reflector can be calculated as S 6 _ Off < 0.032 × S 6 = 0.60 W/m 2 4. Conclusions Table 3. Summary of expected RF exposure levels in beam and outside beam area On-axis maximum Off-axis (>0.34º) max RF Hazard assessment Region exposure level (W/m2) exposure level (W/m2) (off-axis area) Meet FCC MPE limit for Far field (R>2308 m) <7.23 <0.23 public exposure Transition field Meet FCC MPE limit for 7.23 – 16.88 0.23 – 0.53 (962m<R<2308m) public exposure Meet FCC MPE limit for Near field (R>273m) <16.88 <0.53 public exposure Between power feed 190.17 N/A N/A and sub-reflector Antenna surface Meet FCC MPE limit for 29.75 0.94 (main reflector) public exposure Antenna area in Meet FCC MPE limit for plane with sub- 19.04 0.60 public exposure reflector Table 3 summarizes the expected RF exposure levels based on the above analysis. Under the worst-case scenario, the EMF exposure level in all on-axis Page 4 QUALCOMM Proprietary 80-T1262-1 Rev A

EMF Exposure Assessment of 9M MediaFLO Antenna Reference regions, except the area between the power feed and sub-reflector, would meet the occupational exposure limit specified by FCC and ICNIRP. At regions of off- axis (0.34º) from the main beam, the EMF exposure level would be below the limits for both public and occupational exposure specified by FCC and ICNIRP. Since the analysis is based on the worst case conditions, the actual exposure level would be even lower than the above conclusions. The following measures will further assure the protection of public and occupational personnel from potential RF exposure: • The antenna will be installed in an area where public access is restricted. • The antenna of the earth station with will be isolated by a fence by at least 3 meters so the public access area will be in the off-axis area beyond 0.34 degree. • The antenna beam will be elevated at least 30 degrees from the horizontal plane for normal operation. • The transmitter will be turned off during antenna maintenance. • The actual exposure level will be measured and evaluated routinely to ensure it would not exceed the level by this analysis. 5. Reference [1] FCC OET Bullet No. 65, Edition 97-01, “Evaluating Compliance with FCC Guidelines for Human Exposure to Radiofrequency Electromagnetic Fields”, August 1997. [2] ICNIRP Guidelines, “Guidelines for limiting exposure to time-varying electric magnetic, and electromagnetic fields”, Health Physics, Vol.74, No.4, April 1998. 6. Engineering Declaration I hereby certify that the information contained in this test report is complete and true to the best of my knowledge. All test and analysis were performed in accordance with good engineering practices. Certified by: Fang Han Regulatory Engineer, Senior Staff Qualcomm Inc. Date: August 7, 2006 80-T1262-1 Rev A QUALCOMM Proprietary Page 5


Document Created: 2006-08-07 11:50:36
Document Modified: 2006-08-07 11:50:36
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