Antenna Spec.

FCC ID: NDPMF-2352

Cover Letter(s)

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FCCID_3650068


#)l44 §P.## iRA 4 MF—2352 RFID Antenna"—~XHMM&B HJIAWEAKRERA


44EAH+# MRA ® Specification Operation Frequency 13.56MHz Antenna GAIN 0.6dBi Operation Temperature —20°C to + 85°C Storage Temperature —20°C to + 85°C

SO14001 Customer S16949 Director Title For Approval Customer We are please sending you herewith ou specification and drawings for your approval.TK'S! Please return to us one copy "For Approval" with your appoved signatures.TK'S! Commodity : ITR8307/S17/TR8 Model No Issue Date 2012-02-20 Approval date Approval Signatures EVERLIGHT ELECTRONICS CO.,LTD No.25,Lane,76,Sec.3.Chung yang road,Tucheng, Taipei Taiwan. CHIPLIGHT ELECTRONICS CO.,LTD http://www.chiplight.cn 86 - 755 - 3359 0909 FAX: 86 - 755 - 3359 0908

SHENZHEN OFFICE: TEL: 86-755-33590909 FAX: 86-755-33590908 E-mail:evlight@163.com

EVERLIGHT ITR8307/S17/TR8 K Package Dimensions 27102 1st S_ T—] <—€0908 al=l o &< 1_ 0B 5 C @‘ 1| Logs 46+0.2 . j . o bo 3eoP 1 w 0 J AQ 01 D :CATHODE @:COLECTOR @ ANODE @© :ME Notes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions £ 0.15mm Device No:DRX—083—118 Everlight Electronics Co., Ltd. Rev 1.0 Page:2 of 8

EVERLIGHT ITR8307/S17/TR8 B Absolute Maximum Ratings (La=25°C) Parameter Symbol Ratings Unit [Power Dissipation at(or below) 25°C Free . Pd 75 mW [Air Temperature [Reverse Voltage Vr 5 V Input [Forward Current Ir 50 mA [Peak Forward Current (*1) 1 1 A [Pulse width <100 4 s, Duty cycle=1% * Collector Power Dissipation Pc 75 mW Output Collector llect Current I¢ 50 mA Collector—Emitter Voltage B Voro 30 v [Emitter—Collector Voltage B Vrco 5 v |Operating Temperature Topr —20~+70 °C Storage Temperature Tstg —30~+80 °C [Lead Soldering Temperature (*2) Tsol 260 °C (*1) tw=100 gsec., T=10 msec. (*2) t=5 Sec B Electro—Optical Characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit |_Conditions [Forward Voltage V; ——— 1.2 1.6 v TIs—20mA Toput [Reverse Current In ——— ——— 10 LA Va=5V [Peak Wavelength Ar —— 940 ——— mm _ [Dark Current Icro —— —— 100 nA Vex=10V Output C—E Saturation Vor(sat o — 04 v Ic—2mA [Voltage ce(sat) ,Be—1mW/om* B_| 180 ——— 300 Light Current 0 A = ight EOO c aso |_—_| «o **] YoY I—lOmA Transfer Leakage Current Icron —. —— 1 4A Characteristics (Rise time t —— 20 . se@| Veem2V 100 A [Fall time tr — 20 —— usee| 11004 R:=—IKQ Device No:DRX—083—118 Everlight Electronics Co., Ltd. Rev 1.0 Page:3 of 8

ITR8307/S17/TR8 K Typical ElectricaU/Optical/Characteristics Curves for IR Fig. 1 Forward Current vs. Fig. 2 Spectral Distribution Ambient Temperature 100 &_ 100 e Teaso & so Formard Current 1 (m¥) 80 5 E so / \ sos S S 40 5 2 B 2o ho 3 0 —2s 0 2s 5o 75 80100 € 0" o uoo uz0 sto ueo aeo tom memroto Ambient Temperature To (C) Wavelength 2 (nm) Fig. 3 Peok Emission Wovelength vs Fig. 4 Forward Current vs. Ambient Temperature Forward Voltage E o0 500 200 Forward: current s (m#) €, 960 100 5 so s s & 940 20 s S 2 20 920 5 w $ & 900 ~25 0 2s 50 75 100 0 os 10 15 20 25 30 55 Ambient Temperature To (C) Foreard voltage ¥p (4) Fig. 5 Forward Voltage vs Fig. 6 Relative Radiant Intensity vs. Ambient Temperature Angular Displacement a 1 o_ in en ue Z in Farward Voltage. (V Relotive Radlant Intensity F723 xt & ulX ~Sye t Amibent Temperature To(C) Device No:DRX—083—118 Everlight Electronics Co., Ltd. Rev 1.0 Page:4 of 8

EVERLIGHT ITR8307/S17/TR8 K Typical Electro/Optica/Characteristics Curves for PT Fig.1 Collector Power Dissipation vs Fig2 Colector Dork Current us. € Ambient Temperature Ambient Tempercture & t0* s 100 on 5 (e 2e 54 75 B 40‘. 5 05 5 5 502 3 & 9. 107 4 & x 5 5 2 s & 4 S§ u* 107 8 o € os 6 ts se gs as t €s 5 Ambient Temperature. Ta: (°C) & 25 5o 75 100 Ambient Temperature To (C) Fig. 3 Relative Collector Current vs Fig.4 Collector Current vs Ambient Temperature Irraiance 160 20 >c ¥e =37 Yeam s i: 140 €% tm/ont T io mt & 12 To 2 100 Eo. & so §0C 2 § os s5 40 s5 & 20 02 o 0.1 a 10 20 30 40 50 60 70 01 or os 1 2 s 10 20 Ambient Temperature To (°C) Irradiance &# (m#/cm‘) Fig.6 Collector Current vs Fig.5 Spectral Sensitivity 5 Collector—emitter Voltage Em € , > o Ee=1.0m/ E m % E=075m8/cnt 2n 5 5 e € 3 €e—0.25m/orf s mo amo tom ramo 7 J 05004 Wavelength A (am) Collector—emitter Voltage V (V) Device No:DRX—083—118 Everlight Electronics Co., Ltd. Rev 1.0 Page:5 of 8

EVERLIGHT ITR8307/S17/TR8 K Typical ElectricaU/OpticaV/Characteristics Curves For ITR FigRelative Collector Current vs, Distonce between Senson ond Al Evaporetion Golss 100 Relative colleator current00 80 60 40 20 0 1 2 4005 Distance between Senzan ond AL Eveporetion Galss: derm> Fig@ Relative Collector Current vs. Cand Moving Bistonce <D teo Irotna Reiathvecotector current Co L White] Black so 4o ol _ |imm 20 o 1 2 2 4 5 607 Cld noving aistonce 2 (wo Fig3 Response Tine vs. Load Reststance o stt veeey r en EC [ \g@—~ Response. tine(us) o cormer zo 10 s meur e 1 as ovreur se on o 1 10 100 1000 Load reststance Ru. (k2) Device No:DRX—083—118 Everlight Electronics Co., Ltd. Rev 1.0 Page:6 of 8

EVERLIGHT ITR8307/S17/TR8 K Taping Dimension Progressive direction 2.0+0.05 4.000 g1.5 0.25 ETT EL h ; hoi @*} /7 _ —}—|—@—|—G—§J—E——» I €> P 8t o m _ ffn 4| § ) —b0B0 | |o ——#$) 8) J C) #i 53 | 1 i 13./75 8.0 _| 11.98 General Tolerance #0.1 UNIT:mm Device No:DRX—083—118 Everlight Electronics Co., Ltd. Rev 1.0 Page:7 of 8



Document Created: 2017-10-13 08:53:14
Document Modified: 2017-10-13 08:53:14
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