Exhibit 2 Akash GaN Transmitter

1288-EX-ST-2018 Text Documents

Akash Systems, Inc.

2018-07-18ELS_213028

July 18, 2018 Exhibit 2: Akash GaN Transmitter Akash is working to demonstrate a customized, compact Ka-band Akash Transmitter, which incorporates the Akash GaN-on-Diamond technology and a flight-proven software defined radio (SDR). Fig. 1 shows the Akash GaN MMIC, which will be integrated into the Akash Transmitter. Figure 1. Akash GaN-on-Diamond MMIC technology In simulations, the Transmitter is capable of data rates as high as 14 Gbps at 128 APSK modulation (dual polarization). Technical characteristics of the Akash GaN Transmitter are provided in Table 1. Table 1. Akash GaN Transmitter Technical Characteristics Operating Temperature -24C to +65C Operational Frequency 17 – 20 GHz Drain Voltage 28 V DC Power Consumption 156 W Max RF Output Power 20 W Dissipated Power at Plinear 136 W Max Volume 30 x 20 x 10 cm Max Mass 5 kg Random Vibration >14.1 Grms, 3-axis Thermal Cycle >23,000 Radiation Tolerance 100 krad (total dose chassis) Latch-up Immune EEE Parts Commercial space NASA Levels I, II, III; Military Grade B/S Akash Systems, Inc. * 600 California St., Floor 11 * San Francisco, CA 94109 Email: info@akashsystemsinc.com


Document Created: 2018-07-18 13:31:34
Document Modified: 2018-07-18 13:31:34
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