( 3 of 3 ) |
United States Patent | 7,211,508 |
Chung , et al. | May 1, 2007 |
Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
Inventors: | Chung; Hua (San Jose, CA), Wang; Rongjun (Sunnyvale, CA), Maity; Nirmalya (Los Altos, CA) |
Assignee: |
Applied Materials, Inc.
(Santa Clara,
CA)
|
Appl. No.: | 10/871,864 |
Filed: | June 18, 2004 |
Application Number | Filing Date | Patent Number | Issue Date | ||
60479426 | Jun., 2003 | ||||
Current U.S. Class: | 438/633 ; 257/E21.171; 438/625; 438/627; 438/637; 438/640; 438/681 |
Current International Class: | H01L 21/4763 (20060101) |
Field of Search: | 438/633,637,625,627,640,681 |
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