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United States Patent | 6,773,865 |
Dobisz , et al. | August 10, 2004 |
This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers (SAMs) as discharge layers.
Application Number | Filing Date | Patent Number | Issue Date | ||
864384 | May., 2001 | 6586158 | |||
Current U.S. Class: | 430/296 ; 430/322; 430/324; 430/325; 430/326 |
Current International Class: | G03C 5/04 (20060101); G03F 7/09 (20060101); G03F 7/16 (20060101); G03C 7/04 (20060101); G03F 007/00 () |
Field of Search: | 430/296,942,311,322,324,325 |
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J Calvert J. Vac Su & Tech B V9 (1999) p 3447-3450.* . J.Calvert et al.:"Deep Ultraviolet Patterning of Monolayer Films for High Resolution Lithography";Jl.vac.Sc.Tech, B, v9,(1991), p.3447-3450.* . J. Calvert et al.; "Deep Ultraviolet Patterning of Monolayer Films for High Resolution Lithography", J. Vac. Sci & Tech. B. V. 9, (1991), pp. 3447-3450. . Lawliss, Angelopoulos, and Puisto, "Conductive Polyaniline: Applications in X-ray Mask Making", Journal of Vacuum Science & Technology B 15(6), 2224 (1997).. |
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