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United States Patent | 6,586,158 |
Dobisz , et al. | July 1, 2003 |
This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers (SAMs) as discharge layers.
Current U.S. Class: | 430/296 ; 427/258; 430/311; 430/313; 430/5; 430/942 |
Current International Class: | G03F 1/00 (20060101); G03C 5/04 (20060101); G03F 7/09 (20060101); G03F 7/16 (20060101); G03C 7/04 (20060101); G03F 007/00 (); G03C 005/00 (); G03C 005/58 () |
Field of Search: | 430/296,942,311,313,315 427/258 |
4456677 | June 1984 | Chin |
4612275 | September 1986 | Gregor |
4702993 | October 1987 | White et al. |
4936951 | June 1990 | Hashimoto et al. |
4968583 | November 1990 | Ohshio et al. |
5019485 | May 1991 | Nakamura et al. |
5139922 | August 1992 | Watanabe et al. |
5169494 | December 1992 | Hashimoto et al. |
5288368 | February 1994 | DeMarco et al. |
5510216 | April 1996 | Calabrese et al. |
5885753 | March 1999 | Crooks et al. |
6015509 | January 2000 | Angelopuolos et al. |
6114093 | September 2000 | Yamada |
6114099 | September 2000 | Liu et al. |
6132644 | October 2000 | Angelopuolos et al. |
JCalvert et al.;"Deep Unltraviolet Patterning of Monolayer Films for High Resolution Lithography", J.Vac.Sci. & Tech.B. v.9,(1991), pp. 3447-3450.* . Lawliss, Angelopoulos, and Puisto, "Conductive Polyaniline: Applications in X-ray Mask Making", Journal of Vacuum Science & Technology B 15(6), 2224 (1997).. |
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