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United States Patent | 4,804,636 |
Groover, III , et al. | February 14, 1989 |
Disclosed is a process for making VLSI integrated circuits and a local interconnect system, wherein first poly, second poly and moat are all interconnected in any desired pattern by a TiN local interconnect. No masks are required beyond those which would be required for the two poly levels and local interconnect capability anyway.
Inventors: | Groover, III; Robert (Dallas, TX), Haken; Roger A. (Richardson, TX), Holloway; Thomas C. (Dallas, TX) |
Assignee: |
Texas Instruments Incorporated
(Dallas,
TX)
|
Appl. No.: | 06/837,443 |
Filed: | March 7, 1986 |
Application Number | Filing Date | Patent Number | Issue Date | ||
729318 | May., 1985 | ||||
Current U.S. Class: | 438/275 ; 148/DIG.147; 148/DIG.20; 257/369; 257/413; 257/741; 257/E21.296; 257/E21.59; 257/E21.627; 257/E21.688; 257/E27.081; 257/E27.1; 438/233; 438/586; 438/649 |
Current International Class: | H01L 21/768 (20060101); H01L 27/105 (20060101); H01L 21/02 (20060101); H01L 21/8247 (20060101); H01L 21/70 (20060101); H01L 27/11 (20060101); H01L 21/3205 (20060101); H01L 21/8234 (20060101); H01L 021/283 () |
Field of Search: | 29/571,578,580,590,591 437/30,40,41,56,48,200,201,192,52 357/42 148/DIG.20,DIG.147 |
4178605 | December 1979 | Hsu et al. |
4305200 | December 1981 | Fu et al. |
4374700 | February 1983 | Scott et al. |
4502209 | March 1985 | Eizenberg et al. |
4545116 | October 1985 | Lau |
4570328 | February 1986 | Price et al. |
4593454 | June 1986 | Baudrant et al. |
0021400 | Jan., 1981 | EP | |||
61-35517 | Feb., 1986 | JP | |||
S C. Chen et al., "A New Device Interconnect Scheme for Submicron VLSI", in IEDM 84, pp. 118-121. . Alperin et al., "Development of the Self-Aligned TiSi.sub.2 Process . . . ", in IEEE Trans. on Elect. Devices, vol. ED-32, No. 2, Feb. 1985, pp. 141-149. . C. Y. Ting, "Silicide for Contacts and Interconnects" in IEDM, 1984, pp. 110-113. . C. Y. Ting, "TiN Formed by Evaporation as a Diffusion Burner . . . " in J. Vac. Sci. Technol., 21(1), May/Jun. 1982, pp. 14-18. . Wittmer et al., "Applications of TiN Thin Films in Silicon Service . . . " in Thin Solid Films, 93 (1982), pp. 397-405. . Rosser et al., "Self Aligned Nitridation of TiSi.sub.2 : A TiN/TiSi.sub.2 Contact Structure" in Mat. Res. Soc. Symp. Proc., vol. 37, 1985, Material Research Society, pp. 59-62. . Kaneko et al., "Novel Submicron MOS Devices by Self-Aligned Nitridation of Silicide", Technical Digest of IEDM, 1985 (IEEE), pp. 208-211, (Dec. 1, 1985). . DeLaMoneda, "Self-Aligned Silicide Buried Contacts", TBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, pp. 3454-3457. . Rideout, "Method of Fabricating MOSFET Integrated Circuits with Low Resistivity Interconnection Lines", IBM Technical Disclosure Bulletin, vol. 23, No. 6, Nov. 1980, pp. 2563-2566. . Tsang, "Forming Thick Metal Silicide for Contact Barrier", IBM Technical Disclosure, vol. 19, No. 9, Feb. 1977, pp. 3383-3385.. |