( 432 of 478 ) |
United States Patent | 4,675,073 |
Douglas | June 23, 1987 |
A plasma etch process for etching titanium nitride selectively with respect to titanium silicides. A reducing electrode, a low flow rate, and a non-copious fluorine source (such as CF.sub.4) are used to achieve a fluorine-deficient plasma. Preferably the substrate temperature is allowed to rise above 50 C during etching.
Inventors: | Douglas; Monte A. (Coppell, TX) |
Assignee: |
Texas Instruments Incorporated
(Dallas,
TX)
|
Appl. No.: | 06/837,462 |
Filed: | March 7, 1986 |
Current U.S. Class: | 438/720 ; 257/369; 257/384; 257/754; 257/E21.302; 257/E21.311; 257/E21.59; 438/710; 438/714 |
Current International Class: | H01L 21/768 (20060101); H01L 21/3213 (20060101); H01L 21/02 (20060101); H01L 21/321 (20060101); H01L 21/70 (20060101); B44C 001/22 (); C03C 015/00 (); C03C 025/06 () |
Field of Search: | 156/643,644,646,653,655,656,657,659.1,662 204/192EC,192E 29/571,576W,580,591 427/88-89 357/23.6,23.11,41,47,59,65,71 252/79.1 |
4481706 | November 1984 | Roche |