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United States Patent | 3,585,611 |
Lefkowitz , et al. | June 15, 1971 |
A memory element comprising a switchable ferroelectric material which is o a small band gap semiconductor, having sampling bits associated therewith. The surfaces of this material are suitably doped by selective diffusion to produce P-N semiconductor gates on the surfaces. When a question pulse is applied to the semiconducting gates, a current will flow in response to said pulse only when the threshold voltage or coercive field of the ferroelectric is exceeded to thus permit the bit being sampled to reveal the state of polarization of said ferroelectric.
Current U.S. Class: | 365/145 ; 257/E27.104; 327/199; 327/545; 365/174; 365/175 |
Current International Class: | G11C 11/22 (20060101); H01L 27/115 (20060101); H01L 21/00 (20060101); G11c 011/22 (); G11c 011/36 () |
Field of Search: | 317/235,21.1 307/238,279 340/173SS,2 |
2791760 | May 1957 | Ross |
3126509 | March 1964 | Pulvari |
3307089 | February 1967 | Yamashita |